RPD技术制备ITO/a-Si界面的评价

2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) Pub Date : 2019-06-01 DOI:10.1109/PVSC40753.2019.8980657

Tappei Nishihara, T. Kamioka, Hiroki Kanai, Y. Ohshita, H. Matsumura, S. Yasuno, I. Hirosawa, A. Ogura

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引用次数: 0

摘要

我们利用XPS和TEM对硅异质结太阳能电池的ITO/p型a-Si界面进行了评价。用非接触式HAXPES对ITO/a-Si界面进行了氧化处理。在RPD沉积过程中，ITO/a-Si界面被氧化，导致接触电阻增加。采用沉积后退火(PDA)技术修饰了ITO/a-Si界面的化学键态。TEM和EDX成像显示Si和Sn的相互扩散导致界面粗糙度增强，并可能在a-Si层中析出in。

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Evaluation of ITO/a-Si Interface Fabricated by RPD Technique

We evaluated the ITO/p-type a-Si interface for Si heterojunction solar cells using XPS and TEM. It was found that ITO/a-Si interface which is 20 nm from the surface is oxidized by using non-destructive and non-contact HAXPES. The ITO/a-Si interface was oxidized during ITO film deposition by RPD technique, which leads to an increase in contact resistance. The chemical bonding states at the ITO/a-Si interface was modified by post deposition annealing (PDA). The TEM and the EDX mapping images revealed the interdiffusion of Si and Sn resulting in the interface roughness enhancement and the possible In precipitation in the a-Si layer.

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2019 IEEE 46th Photovoltaic Specialists Conference (PVSC)

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