用稳定扫描连续波激光在玻璃上横向结晶制备高性能多晶硅tft

International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224) Pub Date : 2001-12-02 DOI:10.1109/IEDM.2001.979622

A. Hara, Y. Mishima, T. Kakehi, F. Takeuchi, M. Takei, K. Yoshino, K. Suga, M. Chida, N. Sasaki

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引用次数: 19

摘要

我们已经开发出高性能的多晶硅tft，其性能与[100]si - mosfet相当，通过使用稳定的扫描DPSS连续激光横向结晶，而不会对300/spl次/300 mm/sup 2/玻璃基板产生热损伤，工艺温度低于450/spl℃。

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High performance poly-Si TFTs on a glass by a stable scanning CW laser lateral crystallization

We have developed high performance poly-Si TFTs, which have comparable performance to that of [100] Si-MOSFETs, by using a stable scanning DPSS CW laser lateral crystallization without introduction of thermal damage to 300/spl times/300 mm/sup 2/ glass substrates with process temperature below 450/spl deg/C.

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International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)

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