T. Ohshima, N. Nakamura, K. Nakagawa, K. Yamaguchi, M. Miyao
{"title":"MBE埋入单晶硅化电极的高速硅PBT","authors":"T. Ohshima, N. Nakamura, K. Nakagawa, K. Yamaguchi, M. Miyao","doi":"10.1109/IEDM.1991.235430","DOIUrl":null,"url":null,"abstract":"Silicon permeable base transistors (PBTs) with buried single-crystal electrodes were fabricated by developing formation techniques using molecular beam epitaxy (MBE) for obtaining single-crystal-Si/silicide/Si double-heterostructures and silicide films in submicron size patterns. A high transconductance of 50 mS/mm and high current density of 2*10/sup 4/ A/cm/sup 2/ were obtained. The highest unity current gain frequency (f/sub T/) 6 GHz. Computer simulations indicated that the value of f/sub T/ was reasonable and could be improved by more than one order of magnitude (about 120 GHz) by optimizing the device structure.<<ETX>>","PeriodicalId":13885,"journal":{"name":"International Electron Devices Meeting 1991 [Technical Digest]","volume":"6 4 1","pages":"33-36"},"PeriodicalIF":0.0000,"publicationDate":"1991-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"High speed Si PBT with buried single crystal silicide electrode by MBE\",\"authors\":\"T. Ohshima, N. Nakamura, K. Nakagawa, K. Yamaguchi, M. Miyao\",\"doi\":\"10.1109/IEDM.1991.235430\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Silicon permeable base transistors (PBTs) with buried single-crystal electrodes were fabricated by developing formation techniques using molecular beam epitaxy (MBE) for obtaining single-crystal-Si/silicide/Si double-heterostructures and silicide films in submicron size patterns. A high transconductance of 50 mS/mm and high current density of 2*10/sup 4/ A/cm/sup 2/ were obtained. The highest unity current gain frequency (f/sub T/) 6 GHz. Computer simulations indicated that the value of f/sub T/ was reasonable and could be improved by more than one order of magnitude (about 120 GHz) by optimizing the device structure.<<ETX>>\",\"PeriodicalId\":13885,\"journal\":{\"name\":\"International Electron Devices Meeting 1991 [Technical Digest]\",\"volume\":\"6 4 1\",\"pages\":\"33-36\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1991-12-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Electron Devices Meeting 1991 [Technical Digest]\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1991.235430\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Electron Devices Meeting 1991 [Technical Digest]","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1991.235430","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High speed Si PBT with buried single crystal silicide electrode by MBE
Silicon permeable base transistors (PBTs) with buried single-crystal electrodes were fabricated by developing formation techniques using molecular beam epitaxy (MBE) for obtaining single-crystal-Si/silicide/Si double-heterostructures and silicide films in submicron size patterns. A high transconductance of 50 mS/mm and high current density of 2*10/sup 4/ A/cm/sup 2/ were obtained. The highest unity current gain frequency (f/sub T/) 6 GHz. Computer simulations indicated that the value of f/sub T/ was reasonable and could be improved by more than one order of magnitude (about 120 GHz) by optimizing the device structure.<>
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