F. Carrara, A. Scuderi, G. Tontodonato, G. Palmisano
{"title":"一种非常高效的硅双极晶体管","authors":"F. Carrara, A. Scuderi, G. Tontodonato, G. Palmisano","doi":"10.1109/IEDM.2001.979654","DOIUrl":null,"url":null,"abstract":"The potential of a high-performance low-cost silicon bipolar technology for high-efficiency low-voltage RF power amplifiers was explored. To this end, a unit power cell was developed by optimizing layout design, collector thickness and doping level. On-wafer load-pull measurements were performed which showed an excellent power-added efficiency of 83% at 1.8 GHz under a supply voltage of 2.7 V. Additionally, a 1-W output power and a 74% PAE were achieved by a multi-cell packaged device with on-board testing.","PeriodicalId":13825,"journal":{"name":"International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)","volume":"55 1","pages":"40.1.1-40.1.4"},"PeriodicalIF":0.0000,"publicationDate":"2001-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":"{\"title\":\"A very high efficiency silicon bipolar transistor\",\"authors\":\"F. Carrara, A. Scuderi, G. Tontodonato, G. Palmisano\",\"doi\":\"10.1109/IEDM.2001.979654\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The potential of a high-performance low-cost silicon bipolar technology for high-efficiency low-voltage RF power amplifiers was explored. To this end, a unit power cell was developed by optimizing layout design, collector thickness and doping level. On-wafer load-pull measurements were performed which showed an excellent power-added efficiency of 83% at 1.8 GHz under a supply voltage of 2.7 V. Additionally, a 1-W output power and a 74% PAE were achieved by a multi-cell packaged device with on-board testing.\",\"PeriodicalId\":13825,\"journal\":{\"name\":\"International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)\",\"volume\":\"55 1\",\"pages\":\"40.1.1-40.1.4\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-12-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"10\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2001.979654\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2001.979654","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The potential of a high-performance low-cost silicon bipolar technology for high-efficiency low-voltage RF power amplifiers was explored. To this end, a unit power cell was developed by optimizing layout design, collector thickness and doping level. On-wafer load-pull measurements were performed which showed an excellent power-added efficiency of 83% at 1.8 GHz under a supply voltage of 2.7 V. Additionally, a 1-W output power and a 74% PAE were achieved by a multi-cell packaged device with on-board testing.