顶电极与开关层之间的铜插入层对电阻开关特性的影响

2012 IEEE Silicon Nanoelectronics Workshop (SNW) Pub Date : 2012-06-10 DOI:10.1109/SNW.2012.6243355

Sunghun Jung, Jeong-Hoon Oh, K. Ryoo, Sungjun Kim, Jong-Ho Lee, Hyungcheol Shin, Byung-Gook Park

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引用次数: 0

摘要

通过在铂(Pt)和二氧化钛(TiO2)之间插入铜(Cu)金属层，我们观察到了Pt/Cu/TiO2/Pt堆叠RRAM电池的单极和双极电阻开关特性。为了分析传导机理，我们进行了I-V拟合。根据偏置极性依赖性的测量结果，我们发现铜具有储氧的作用。可以解释双极电阻开关电池的氧化还原机理。

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Effect of Cu insertion layer between top electrode and switching layer on resistive switching characteristics

By inserting copper (Cu) metal layer between platinum (Pt) and titanium dioxide (TiO2), we have observed both unipolar and bipolar resistive switching characteristics in Pt/Cu/TiO2/Pt stacked RRAM cell. In order to analyze the conduction mechanism, we have conducted I-V fitting. And based on measurement results of bias polarity dependency, we have found that copper plays a role as oxygen reservoir. It can explain redox mechanism in bipolar resistive switching cell.

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2012 IEEE Silicon Nanoelectronics Workshop (SNW)

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