短沟道石墨烯场效应晶体管输出特性的准饱和可以被设计出来吗?

70th Device Research Conference Pub Date : 2012-06-18 DOI:10.1109/DRC.2012.6256951

K. Ganapathi, M. Lundstrom, S. Salahuddin

{"title":"短沟道石墨烯场效应晶体管输出特性的准饱和可以被设计出来吗?","authors":"K. Ganapathi, M. Lundstrom, S. Salahuddin","doi":"10.1109/DRC.2012.6256951","DOIUrl":null,"url":null,"abstract":"To summarize, we propose that quasi-saturation in short-channel GFET output characteristics can be effectively engineered by doping in the drain-underlap region and show using self-consistent NEGF simulations that a 0.2% p-type doping can enhance output resistance by 13x and intrinsic gain by 4x in 20 nm gate-length GFETs.","PeriodicalId":6808,"journal":{"name":"70th Device Research Conference","volume":"100 3 1","pages":"85-86"},"PeriodicalIF":0.0000,"publicationDate":"2012-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Can quasi-saturation in the output characteristics of short-channel graphene field-effect transistors be engineered?\",\"authors\":\"K. Ganapathi, M. Lundstrom, S. Salahuddin\",\"doi\":\"10.1109/DRC.2012.6256951\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"To summarize, we propose that quasi-saturation in short-channel GFET output characteristics can be effectively engineered by doping in the drain-underlap region and show using self-consistent NEGF simulations that a 0.2% p-type doping can enhance output resistance by 13x and intrinsic gain by 4x in 20 nm gate-length GFETs.\",\"PeriodicalId\":6808,\"journal\":{\"name\":\"70th Device Research Conference\",\"volume\":\"100 3 1\",\"pages\":\"85-86\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-06-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"70th Device Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.2012.6256951\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"70th Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2012.6256951","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

综上所述，我们提出在漏极-底迭区掺杂可以有效地设计短沟道GFET输出特性的准饱和，并使用自一致的NEGF模拟表明，0.2% p型掺杂可以使20nm栅长GFET的输出电阻提高13倍，固有增益提高4倍。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Can quasi-saturation in the output characteristics of short-channel graphene field-effect transistors be engineered?

To summarize, we propose that quasi-saturation in short-channel GFET output characteristics can be effectively engineered by doping in the drain-underlap region and show using self-consistent NEGF simulations that a 0.2% p-type doping can enhance output resistance by 13x and intrinsic gain by 4x in 20 nm gate-length GFETs.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

70th Device Research Conference

自引率

0.00%

发文量