带气隙的先进互连方案的焦耳加热研究

M. Lofrano, O. Pedreira, I. Ciofi, H. Oprins, Seongho Park, Z. Tokei
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引用次数: 4

摘要

在本文中,我们提出了一个模型研究,以研究自热效应的先进金属化方案与气隙使用实验校准的有限元模型。将N3技术节点与N2集成气隙进行比较。尽管在有气隙的N2结构中,在金属水平较低的N2结构中,全致密Ru线的金属密度(50%)较高,但N2堆叠比线密度为25%的N3结构更容易发生自热,表明IMD对互连自热有重要影响。我们量化了线密度和IMD对互连温升的影响。我们发现当线密度从50%降低到15%时,互连结构的温度升高了40%。低k热导率值降低到1 W/m-K以下会加速BEOL的温度升高。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Joule heating investigation for advanced interconnect schemes with airgaps
In this paper, we present a modeling study to investigate the self-heating effect on advanced metallization schemes with airgaps using an experimentally calibrated finite element model. We compared N3 technology node with N2 integrated with airgaps. Despite the higher metal density of the fully dense Ru lines (50%) at the lower metal levels in the N2 structure with airgaps, the N2 stack is more susceptible to self-heating than the N3 structure with 25% line density, showing that the IMD has an important impact on the interconnect self-heating. We quantified the effect of the line density and IMD on the interconnect temperature increase. We found that decreasing the line density from 50% to 15% increases the temperature with 40% in the interconnect structure. A reduction of the low-k thermal conductivity values below 1 W/m-K shows to accelerate the temperature increase in the BEOL.
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