{"title":"作为高介电常数介电介质的高压溅射沉积在硅上的金属钆的等离子体氧化","authors":"M. Pampillón, P. C. Feijoo, E. Andrés, J. Fierro","doi":"10.1109/CDE.2013.6481328","DOIUrl":null,"url":null,"abstract":"Gadolinium oxide thin films were deposited on Si by sputtering a metallic gadolinium target at high pressure followed by an in situ plasma oxidation. Different metal deposition times with the same oxidation conditions were studied. The deposition conditions were analyzed by means of glow discharge optical spectroscopy. The oxide films were characterized by X-ray photoelectron spectroscopy, high resolution transmission electron microscopy and Fourier transform infrared spectroscopy. The films resulted stoichiometric and amorphous. Metal-insulator-semiconductor structures were fabricated with two different metal gates: titanium and platinum. The devices were measured before and after temperature treatments in a forming gas atmosphere. The Ti gated devices scavenge the SiOx interlayer while the Pt ones show no metal reaction.","PeriodicalId":6614,"journal":{"name":"2013 Spanish Conference on Electron Devices","volume":"214 1","pages":"5-8"},"PeriodicalIF":0.0000,"publicationDate":"2013-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Plasma oxidation of metallic gadolinium deposited on silicon by high pressure sputtering as high permittivity dielectric\",\"authors\":\"M. Pampillón, P. C. Feijoo, E. Andrés, J. Fierro\",\"doi\":\"10.1109/CDE.2013.6481328\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Gadolinium oxide thin films were deposited on Si by sputtering a metallic gadolinium target at high pressure followed by an in situ plasma oxidation. Different metal deposition times with the same oxidation conditions were studied. The deposition conditions were analyzed by means of glow discharge optical spectroscopy. The oxide films were characterized by X-ray photoelectron spectroscopy, high resolution transmission electron microscopy and Fourier transform infrared spectroscopy. The films resulted stoichiometric and amorphous. Metal-insulator-semiconductor structures were fabricated with two different metal gates: titanium and platinum. The devices were measured before and after temperature treatments in a forming gas atmosphere. The Ti gated devices scavenge the SiOx interlayer while the Pt ones show no metal reaction.\",\"PeriodicalId\":6614,\"journal\":{\"name\":\"2013 Spanish Conference on Electron Devices\",\"volume\":\"214 1\",\"pages\":\"5-8\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-03-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 Spanish Conference on Electron Devices\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CDE.2013.6481328\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 Spanish Conference on Electron Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CDE.2013.6481328","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Plasma oxidation of metallic gadolinium deposited on silicon by high pressure sputtering as high permittivity dielectric
Gadolinium oxide thin films were deposited on Si by sputtering a metallic gadolinium target at high pressure followed by an in situ plasma oxidation. Different metal deposition times with the same oxidation conditions were studied. The deposition conditions were analyzed by means of glow discharge optical spectroscopy. The oxide films were characterized by X-ray photoelectron spectroscopy, high resolution transmission electron microscopy and Fourier transform infrared spectroscopy. The films resulted stoichiometric and amorphous. Metal-insulator-semiconductor structures were fabricated with two different metal gates: titanium and platinum. The devices were measured before and after temperature treatments in a forming gas atmosphere. The Ti gated devices scavenge the SiOx interlayer while the Pt ones show no metal reaction.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
