B. Liu, X. Gong, G. Han, P. S. Lim, Y. Tong, Qian Zhou, Yue Yang, N. Daval, M. Pulido, D. Delprat, B. Nguyen, Y. Yeo
{"title":"高性能Ω-gate Ge FinFET具有低温Si2H6钝化和无植入肖特基势垒nge金属源/漏","authors":"B. Liu, X. Gong, G. Han, P. S. Lim, Y. Tong, Qian Zhou, Yue Yang, N. Daval, M. Pulido, D. Delprat, B. Nguyen, Y. Yeo","doi":"10.1109/SNW.2012.6243323","DOIUrl":null,"url":null,"abstract":"We report the first Ω-gate Germanium (Ge) p-channel FinFET with low-temperature Si<sub>2</sub>H<sub>6</sub> passivation and implantless Schottky-barrier nickel germanide (NiGe) metallic Source/Drain, formed on high-quality GeOI substrates using sub-400 °C process modules. As compared with reported multi-gate (MuG) Ge devices in which the Ge channels were formed by top-down approaches, the Ge FinFETs in this work have a record high on-state current I<sub>ON</sub> of ~494 μA/μm at V<sub>GS</sub> - V<sub>TH</sub> = -1 V and V<sub>DS</sub> = -1 V. A high I<sub>ON</sub>/I<sub>OFF</sub> ratio of more than 3×10<sup>4</sup> and a high peak saturation transconductance G<sub>MSatMax</sub> of ~540 μS/μm were achieved.","PeriodicalId":6402,"journal":{"name":"2012 IEEE Silicon Nanoelectronics Workshop (SNW)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2012-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"High performance Ω-gate Ge FinFET featuring low temperature Si2H6 passivation and implantless Schottky-barrier NiGe metallic Source/Drain\",\"authors\":\"B. Liu, X. Gong, G. Han, P. S. Lim, Y. Tong, Qian Zhou, Yue Yang, N. Daval, M. Pulido, D. Delprat, B. Nguyen, Y. Yeo\",\"doi\":\"10.1109/SNW.2012.6243323\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report the first Ω-gate Germanium (Ge) p-channel FinFET with low-temperature Si<sub>2</sub>H<sub>6</sub> passivation and implantless Schottky-barrier nickel germanide (NiGe) metallic Source/Drain, formed on high-quality GeOI substrates using sub-400 °C process modules. As compared with reported multi-gate (MuG) Ge devices in which the Ge channels were formed by top-down approaches, the Ge FinFETs in this work have a record high on-state current I<sub>ON</sub> of ~494 μA/μm at V<sub>GS</sub> - V<sub>TH</sub> = -1 V and V<sub>DS</sub> = -1 V. A high I<sub>ON</sub>/I<sub>OFF</sub> ratio of more than 3×10<sup>4</sup> and a high peak saturation transconductance G<sub>MSatMax</sub> of ~540 μS/μm were achieved.\",\"PeriodicalId\":6402,\"journal\":{\"name\":\"2012 IEEE Silicon Nanoelectronics Workshop (SNW)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-06-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 IEEE Silicon Nanoelectronics Workshop (SNW)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SNW.2012.6243323\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE Silicon Nanoelectronics Workshop (SNW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SNW.2012.6243323","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High performance Ω-gate Ge FinFET featuring low temperature Si2H6 passivation and implantless Schottky-barrier NiGe metallic Source/Drain
We report the first Ω-gate Germanium (Ge) p-channel FinFET with low-temperature Si2H6 passivation and implantless Schottky-barrier nickel germanide (NiGe) metallic Source/Drain, formed on high-quality GeOI substrates using sub-400 °C process modules. As compared with reported multi-gate (MuG) Ge devices in which the Ge channels were formed by top-down approaches, the Ge FinFETs in this work have a record high on-state current ION of ~494 μA/μm at VGS - VTH = -1 V and VDS = -1 V. A high ION/IOFF ratio of more than 3×104 and a high peak saturation transconductance GMSatMax of ~540 μS/μm were achieved.
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