K. Malathi Santhoshini , Sarada Musala , Srinivasulu Avireni
{"title":"一种采用压差跨导放大器的积分器电路","authors":"K. Malathi Santhoshini , Sarada Musala , Srinivasulu Avireni","doi":"10.1016/j.ssel.2018.08.001","DOIUrl":null,"url":null,"abstract":"<div><p>This paper illustrates a novel design of voltage-mode Integrator using the active element, namely Voltage Difference Transconductance Amplifier (VDTA). The proposed circuit avails one VDTA element and a single capacitor. This provides more beneficial for the fabrication of ICs in VLSI design. The designed circuit works with ±0.9 V supply voltage, uses a bias current of order 150 µA and also its amplitude is electronically tunable with the bias current. The proposed circuit is designed in a gpdk 180 nm CMOS process using a Cadence Virtuoso tool and also has the power dissipation of order 270 µW. The simulation results are verified experimentally with the commercially available ICs LM13700.</p></div>","PeriodicalId":101175,"journal":{"name":"Solid State Electronics Letters","volume":"1 1","pages":"Pages 10-14"},"PeriodicalIF":0.0000,"publicationDate":"2019-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/j.ssel.2018.08.001","citationCount":"3","resultStr":"{\"title\":\"An integrator circuit using voltage difference transconductance amplifier\",\"authors\":\"K. Malathi Santhoshini , Sarada Musala , Srinivasulu Avireni\",\"doi\":\"10.1016/j.ssel.2018.08.001\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>This paper illustrates a novel design of voltage-mode Integrator using the active element, namely Voltage Difference Transconductance Amplifier (VDTA). The proposed circuit avails one VDTA element and a single capacitor. This provides more beneficial for the fabrication of ICs in VLSI design. The designed circuit works with ±0.9 V supply voltage, uses a bias current of order 150 µA and also its amplitude is electronically tunable with the bias current. The proposed circuit is designed in a gpdk 180 nm CMOS process using a Cadence Virtuoso tool and also has the power dissipation of order 270 µW. The simulation results are verified experimentally with the commercially available ICs LM13700.</p></div>\",\"PeriodicalId\":101175,\"journal\":{\"name\":\"Solid State Electronics Letters\",\"volume\":\"1 1\",\"pages\":\"Pages 10-14\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://sci-hub-pdf.com/10.1016/j.ssel.2018.08.001\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Solid State Electronics Letters\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S2589208818300048\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Solid State Electronics Letters","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S2589208818300048","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
An integrator circuit using voltage difference transconductance amplifier
This paper illustrates a novel design of voltage-mode Integrator using the active element, namely Voltage Difference Transconductance Amplifier (VDTA). The proposed circuit avails one VDTA element and a single capacitor. This provides more beneficial for the fabrication of ICs in VLSI design. The designed circuit works with ±0.9 V supply voltage, uses a bias current of order 150 µA and also its amplitude is electronically tunable with the bias current. The proposed circuit is designed in a gpdk 180 nm CMOS process using a Cadence Virtuoso tool and also has the power dissipation of order 270 µW. The simulation results are verified experimentally with the commercially available ICs LM13700.