{"title":"一种2.4GHz OOK功率可编程CMOS射频功率放大器","authors":"Li-han Cui, Hejia Cai, Tao Wang, Zhi-liang Hong","doi":"10.1109/icsict49897.2020.9278369","DOIUrl":null,"url":null,"abstract":"The post-simulation result of a power programmable 2.4GHz OOK radio frequency power amplifier (RF PA) is presented. It is implemented in 65nm CMOS process with 1.1V power supply. Its output power is programmable with digital setting channel width of the output power MOS transistors, meanwhile the output of the first stage can be digital controlled too. The simulation results of all output power levels from −23.01dBm to 8.92dBm are achieved.","PeriodicalId":6727,"journal":{"name":"2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)","volume":"6 1","pages":"1-3"},"PeriodicalIF":0.0000,"publicationDate":"2020-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A 2.4GHz OOK Power Programmable CMOS RF Power Amplifier\",\"authors\":\"Li-han Cui, Hejia Cai, Tao Wang, Zhi-liang Hong\",\"doi\":\"10.1109/icsict49897.2020.9278369\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The post-simulation result of a power programmable 2.4GHz OOK radio frequency power amplifier (RF PA) is presented. It is implemented in 65nm CMOS process with 1.1V power supply. Its output power is programmable with digital setting channel width of the output power MOS transistors, meanwhile the output of the first stage can be digital controlled too. The simulation results of all output power levels from −23.01dBm to 8.92dBm are achieved.\",\"PeriodicalId\":6727,\"journal\":{\"name\":\"2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)\",\"volume\":\"6 1\",\"pages\":\"1-3\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-11-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/icsict49897.2020.9278369\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/icsict49897.2020.9278369","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 2.4GHz OOK Power Programmable CMOS RF Power Amplifier
The post-simulation result of a power programmable 2.4GHz OOK radio frequency power amplifier (RF PA) is presented. It is implemented in 65nm CMOS process with 1.1V power supply. Its output power is programmable with digital setting channel width of the output power MOS transistors, meanwhile the output of the first stage can be digital controlled too. The simulation results of all output power levels from −23.01dBm to 8.92dBm are achieved.