传统场效应晶体管生物传感器的基本限制:量子机械隧道技术的拯救

D. Sarkar, K. Banerjee
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引用次数: 66

摘要

使用场效应晶体管(fet)进行生物分子的电检测[1-5]非常有吸引力,因为它没有标签,价格低廉,允许传感器和测量系统的可扩展性和片上集成。纳米结构场效应管,特别是纳米线,由于其高静电控制和大的表面体积比而获得了特殊的重要性。为了将FET配置为生物传感器(图1(a)),半导体上的介电/氧化物层被特定受体功能化。这些受体捕获所需的目标生物分子(一种称为共轭的过程),由于它们的电荷对半导体产生门控效应,从而改变其电学性质,如电流、电导等。由此可以直观地看出,场效应管对门控效应的响应越大,其灵敏度也就越高,其中灵敏度可以定义为由于生物分子偶联引起的电流变化与初始电流(偶联前)的比值。虽然门控效应的最高响应可以在亚阈值区域获得,但由于玻尔兹曼暴政(图1(b))效应(KB为玻尔兹曼常数,T为温度)对可实现的最小亚阈值摆幅(SS) [KBT/q ln(10)]的理论限制,传统fet (cet)受到严重影响。这也对基于cefet的生物传感器的灵敏度和响应时间造成了根本性的限制[6]。近年来,隧道-场效应管在低功率数字应用中引起了广泛的关注[7]-[17],因为它们能够克服cfet的SS (60 mV/十进)的基本限制。最近,有研究表明,可以利用tfet优越的亚阈值行为来实现高效的生物传感器[6]。这是可能的,这要归功于tfet中以带对带隧道形式存在的根本不同的电流注入机制[17]。TFET生物传感器的工作原理如图1c所示。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Fundamental limitations of conventional-FET biosensors: Quantum-mechanical-tunneling to the rescue
Electrical detection of biomolecules using Field-Effect-Transistors (FETs) [1-5] is very attractive, since it is label-free, inexpensive, allows scalability and on-chip integration of both sensor and measurement systems. Nanostructured FETs, especially nanowires have gained special importance due to their high electrostatic control and large surface-to-volume ratio. In order to configure the FET as a biosensor (Fig. 1(a)), the dielectric/oxide layer on the semiconductor is functionalized with specific receptors. These receptors capture the desired target biomolecules (a process called conjugation), which due to their charge produce gating effect on the semiconductor, thus changing its electrical properties such as current, conductance etc. Thus it is intuitive, that greater the response of the FET to the gating effect, higher will be its sensitivity where sensitivity can be defined as the ratio of change in current due to biomolecule conjugation to the initial current (before conjugation). While the highest response to gating effect can be obtained in the subthreshold region, the conventional FETs (CFET) suffer severely due to the theoretical limitation on the minimum achievable Subthreshold Swing (SS) of [KBT/q ln(10)] due to the Boltzmann tyranny (Fig. 1(b)) effect where KB is the Boltzmann constant and T is the temperature. This also poses fundamental limitations on the sensitivity and response time of CFET based biosensors [6]. In recent times, Tunnel- FETs have attracted a lot of attention for low power digital applications [7]-[17], due to their ability to overcome the fundamental limitation in SS (60 mV/decade) of CFETs. Recently, it has been shown that the superior subthreshold behavior of TFETs can be leveraged to achieve highly efficient biosensors [6]. This is possible, thanks to the fundamentally different current injection mechanism in TFETs in the form of band-to-band tunneling [17]. The working principle of TFET biosensors is illustrated in Fig. 1c.
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