EUV光刻用掠入射镜

V. Braic, M. Balaceanu, M. Braic
{"title":"EUV光刻用掠入射镜","authors":"V. Braic, M. Balaceanu, M. Braic","doi":"10.1109/SMICND.2008.4703399","DOIUrl":null,"url":null,"abstract":"Extreme UV lithography is one of the most favoured options for the next generation of lithography systems, being considered as one of the keys of the 50 nm technology node. ZrN/TiN, multi-layered coatings for mirrors with high reflectivity at grazing incidence for EUV radiation (13.5) are proposed as coatings for the collection mirror in an EUVL system. These films were deposited on different substrates (Si, glass, and different metals) by d.c. magnetron sputtering and characterized by XRD, AES, EDX, AFM and EUV reflectivity using synchrotron radiation.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":"227 1","pages":"267-270"},"PeriodicalIF":0.0000,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Grazing incidence mirrors for EUV lithography\",\"authors\":\"V. Braic, M. Balaceanu, M. Braic\",\"doi\":\"10.1109/SMICND.2008.4703399\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Extreme UV lithography is one of the most favoured options for the next generation of lithography systems, being considered as one of the keys of the 50 nm technology node. ZrN/TiN, multi-layered coatings for mirrors with high reflectivity at grazing incidence for EUV radiation (13.5) are proposed as coatings for the collection mirror in an EUVL system. These films were deposited on different substrates (Si, glass, and different metals) by d.c. magnetron sputtering and characterized by XRD, AES, EDX, AFM and EUV reflectivity using synchrotron radiation.\",\"PeriodicalId\":6406,\"journal\":{\"name\":\"2008 IEEE International Conference on Semiconductor Electronics\",\"volume\":\"227 1\",\"pages\":\"267-270\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-12-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 IEEE International Conference on Semiconductor Electronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMICND.2008.4703399\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 IEEE International Conference on Semiconductor Electronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.2008.4703399","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

摘要

极紫外光刻技术是下一代光刻系统中最受欢迎的选择之一,被认为是50纳米技术节点的关键之一。提出了用于EUVL系统收集镜的ZrN/TiN多层涂层,该涂层具有较高的掠射反射率(13.5)。这些薄膜采用直流磁控溅射沉积在不同的衬底(Si、玻璃和不同的金属)上,并用XRD、AES、EDX、AFM和同步辐射EUV反射率对其进行了表征。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Grazing incidence mirrors for EUV lithography
Extreme UV lithography is one of the most favoured options for the next generation of lithography systems, being considered as one of the keys of the 50 nm technology node. ZrN/TiN, multi-layered coatings for mirrors with high reflectivity at grazing incidence for EUV radiation (13.5) are proposed as coatings for the collection mirror in an EUVL system. These films were deposited on different substrates (Si, glass, and different metals) by d.c. magnetron sputtering and characterized by XRD, AES, EDX, AFM and EUV reflectivity using synchrotron radiation.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信