EUV光刻用掠入射镜

V. Braic, M. Balaceanu, M. Braic
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引用次数: 2

摘要

极紫外光刻技术是下一代光刻系统中最受欢迎的选择之一,被认为是50纳米技术节点的关键之一。提出了用于EUVL系统收集镜的ZrN/TiN多层涂层,该涂层具有较高的掠射反射率(13.5)。这些薄膜采用直流磁控溅射沉积在不同的衬底(Si、玻璃和不同的金属)上,并用XRD、AES、EDX、AFM和同步辐射EUV反射率对其进行了表征。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Grazing incidence mirrors for EUV lithography
Extreme UV lithography is one of the most favoured options for the next generation of lithography systems, being considered as one of the keys of the 50 nm technology node. ZrN/TiN, multi-layered coatings for mirrors with high reflectivity at grazing incidence for EUV radiation (13.5) are proposed as coatings for the collection mirror in an EUVL system. These films were deposited on different substrates (Si, glass, and different metals) by d.c. magnetron sputtering and characterized by XRD, AES, EDX, AFM and EUV reflectivity using synchrotron radiation.
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