{"title":"石墨烯纳米带与铜和铝互连的比较","authors":"Ning Wang, C. English, E. Pop","doi":"10.1109/DRC.2012.6256995","DOIUrl":null,"url":null,"abstract":"We present a comparative study of graphene nanoribbon (GNR) interconnects (ICs) with sub-50 nm copper (Cu) and aluminum (AI) ICs. We extend existing models for all materials in order to understand the physical size effects that occur when the electron mean free path (AMFP) becomes comparable to the IC dimensions. We calibrate such models against the best publicly available data. We find that, depending on geometrical configuration, either Al or GNRs could hold advantages over Cu at linewidths <;10 nm.","PeriodicalId":6808,"journal":{"name":"70th Device Research Conference","volume":"183 1","pages":"123-124"},"PeriodicalIF":0.0000,"publicationDate":"2012-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Comparison of graphene nanoribbons with Cu and Al interconnects\",\"authors\":\"Ning Wang, C. English, E. Pop\",\"doi\":\"10.1109/DRC.2012.6256995\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present a comparative study of graphene nanoribbon (GNR) interconnects (ICs) with sub-50 nm copper (Cu) and aluminum (AI) ICs. We extend existing models for all materials in order to understand the physical size effects that occur when the electron mean free path (AMFP) becomes comparable to the IC dimensions. We calibrate such models against the best publicly available data. We find that, depending on geometrical configuration, either Al or GNRs could hold advantages over Cu at linewidths <;10 nm.\",\"PeriodicalId\":6808,\"journal\":{\"name\":\"70th Device Research Conference\",\"volume\":\"183 1\",\"pages\":\"123-124\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-06-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"70th Device Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.2012.6256995\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"70th Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2012.6256995","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Comparison of graphene nanoribbons with Cu and Al interconnects
We present a comparative study of graphene nanoribbon (GNR) interconnects (ICs) with sub-50 nm copper (Cu) and aluminum (AI) ICs. We extend existing models for all materials in order to understand the physical size effects that occur when the electron mean free path (AMFP) becomes comparable to the IC dimensions. We calibrate such models against the best publicly available data. We find that, depending on geometrical configuration, either Al or GNRs could hold advantages over Cu at linewidths <;10 nm.
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