单电子晶体管硅三量子点系统的电荷传感

2012 IEEE Silicon Nanoelectronics Workshop (SNW) Pub Date : 2012-06-10 DOI:10.1109/SNW.2012.6243290

R. Mizokuchi, T. Kodera, K. Horibe, Y. Kawano, S. Oda

{"title":"单电子晶体管硅三量子点系统的电荷传感","authors":"R. Mizokuchi, T. Kodera, K. Horibe, Y. Kawano, S. Oda","doi":"10.1109/SNW.2012.6243290","DOIUrl":null,"url":null,"abstract":"We fabricate a serial triple quantum dot (TQD) system, which is made on a silicon-on-insulator (SOI) wafer by dry etching and integrated with single electron transistors (SETs) as charge sensors. We observe charge transitions of a dot in the TQD in the characteristic of the charge sensor which is the furthest to the dot. It implies a SET charge sensor has a capability of sensing of all the charge transitions in TQD.","PeriodicalId":6402,"journal":{"name":"2012 IEEE Silicon Nanoelectronics Workshop (SNW)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2012-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Charge sensing of a Si triple quantum dot system using single electron transistors\",\"authors\":\"R. Mizokuchi, T. Kodera, K. Horibe, Y. Kawano, S. Oda\",\"doi\":\"10.1109/SNW.2012.6243290\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We fabricate a serial triple quantum dot (TQD) system, which is made on a silicon-on-insulator (SOI) wafer by dry etching and integrated with single electron transistors (SETs) as charge sensors. We observe charge transitions of a dot in the TQD in the characteristic of the charge sensor which is the furthest to the dot. It implies a SET charge sensor has a capability of sensing of all the charge transitions in TQD.\",\"PeriodicalId\":6402,\"journal\":{\"name\":\"2012 IEEE Silicon Nanoelectronics Workshop (SNW)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-06-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 IEEE Silicon Nanoelectronics Workshop (SNW)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SNW.2012.6243290\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE Silicon Nanoelectronics Workshop (SNW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SNW.2012.6243290","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

我们制造了一个串行三重量子点(TQD)系统，该系统通过干蚀刻在绝缘体上的硅(SOI)晶圆上制成，并与单电子晶体管(set)集成作为电荷传感器。我们在距离点最远的电荷传感器的特性中观察到TQD中点的电荷跃迁。这意味着SET电荷传感器具有检测TQD中所有电荷跃迁的能力。

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Charge sensing of a Si triple quantum dot system using single electron transistors

We fabricate a serial triple quantum dot (TQD) system, which is made on a silicon-on-insulator (SOI) wafer by dry etching and integrated with single electron transistors (SETs) as charge sensors. We observe charge transitions of a dot in the TQD in the characteristic of the charge sensor which is the furthest to the dot. It implies a SET charge sensor has a capability of sensing of all the charge transitions in TQD.

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2012 IEEE Silicon Nanoelectronics Workshop (SNW)

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