具有指数增益控制的可变增益CMOS放大器

2000 Symposium on VLSI Circuits. Digest of Technical Papers (Cat. No.00CH37103) Pub Date : 2000-06-15 DOI:10.1109/VLSIC.2000.852875

Christopher W. Mangelsdorf

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引用次数: 59

摘要

采用线性化跨导模块构造了一种适用于铸造型CMOS的可变增益放大器结构。使用一个四晶体管跨导电池允许更宽的增益范围和更大的信号摆幅在低供电条件下比简单的差分对在以前的工作中使用。实验结果表明，在0.6 /spl mu/m CMOS下，增益为-5 ~ 35db，带宽为20mhz。

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A variable gain CMOS amplifier with exponential gain control

A variable gain amplifier architecture suitable for foundry CMOS is constructed using linearized transconductance blocks. The use of a four-transistor transconductance cell allows for wider gain range and larger signal swing under low supply conditions than the simple differential pair used in previous work. Experimental results with 0.6 /spl mu/m CMOS show -5 to 35 dB gain and 20 MHz bandwidth at 21 mW.

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2000 Symposium on VLSI Circuits. Digest of Technical Papers (Cat. No.00CH37103)

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