电子封装用40Si-Al合金热性能的有限元模拟

Shen Wei, Pu Yu-ping, Zhao Peng, Zhu Li-ran
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引用次数: 2

摘要

由于硅铝合金比传统的封装材料更轻、更硬、具有更好的散热性能,已被证明是用于封装微波混合电路的新型材料。本文基于40Si-Al的真实显微结构图像生成了有限元几何模型。基于傅里叶热传导和热膨胀方程,采用有限元法对40Si-Al的导热系数和热膨胀系数进行了量化。采用统计方法,结合有限元计算结果,分别计算了室温下的导热系数和CTE。数值模拟结果与实验结果吻合,表明本文所建立的方法是计算硅铝合金热性能的有效方法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Finite element simulation of thermal properties of 40Si-Al alloys for electronics packaging
Due to lighter, stiffer and offer superior heat-sinking than traditional packaging materials, Si-Al alloys have been proved as novel materials used for packaging microwave hybrid circuitry. In the current paper, finite element geometric models based on the real microstructural images of 40Si-Al are generated. Furthermore, based on Fourier's law for heat conduction and thermal expansion equation, thermal properties including the thermal conductivity and the coefficient of thermal expansion (CTE) of 40Si-Al are quantified by finite element method (FEM). By means of statistical method in conjunction with FEM results, the thermal conductivity and CTE at room temperature are calculated, respectively. The numerical simulation result agrees with the corresponding experimental result, which shows that the methodology developed in this paper is efficient in calculating thermal properties of Si-Al alloys.
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