先进的双采样架构

2016 IEEE 22nd International Symposium on On-Line Testing and Robust System Design (IOLTS) Pub Date : 2016-07-04 DOI:10.1109/IOLTS.2016.7604685

M. Nicolaidis, M. Dimopoulos

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引用次数: 3

摘要

积极的技术缩放对工艺、电压和温度(PVT)变化产生了巨大影响;电路老化、磨损;时钟倾斜;对电磁干扰(例如串扰和地面反弹)的敏感性，对辐射诱发的seu集的敏感性;以及功耗和热约束。由此产生的高缺陷率和设计复杂性，对制造成品率和可靠性产生不利影响。

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Advanced double-sampling architectures

Aggressive technology scaling has dramatic impact on process, voltage and temperature (PVT) variations; circuit aging and wearout; clock skews; sensitivity to EMI (e.g. crosstalk and ground bounce), sensitivity to radiation-induced SEUs SETs; as well as power dissipation and thermal constraints. The resulting high defect rates and design complexity, adversely affect fabrication yield and reliability.

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来源期刊

2016 IEEE 22nd International Symposium on On-Line Testing and Robust System Design (IOLTS)

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