高击穿电压SOI器件的总电离剂量效应

2014 20th International Conference on Ion Implantation Technology (IIT) Pub Date : 2014-10-30 DOI:10.1109/IIT.2014.6940005

Zhongjian Wang, Xinhong Cheng, C. Xia, Dawei Xu, Lingyan Shen, D. Cao, Li Zheng, Qian Wang, Yu Yuehui

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引用次数: 9

摘要

本文用改进的场氧化物(FOX)在SOI薄层上制备了600V LDMOS和light。测量了导通特性和导通特性对导通击穿电压的影响。实验研究了总电离剂量(TID)对LDMOS和light的影响。比较了不同剂量和偏置条件下60Co辐照引起的阈值电压偏移和泄漏电流。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Total ionizing dose effects in high breakdown voltage SOI devices

In this paper, 600V LDMOS and LIGBT on thin SOI with improved field oxide (FOX) were fabricated. The dependence of the off-state breakdown voltage on the implant dose in the drift region and the on-state characteristics were measured. Total ionizing dose (TID) effects on LDMOS and LIGBT were studied experimentally. The threshold voltage shift and leakage current induced by 60Co gamma irradiation under different dose and bias conditions were compared.

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来源期刊

2014 20th International Conference on Ion Implantation Technology (IIT)

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