{"title":"基于高分辨率透射电镜和几何相位分析的亚10nm SiGe层二维应变映射","authors":"Vandang Hoang, Van Trung Trinh","doi":"10.4028/p-0xgppz","DOIUrl":null,"url":null,"abstract":"In this study, strain measurement can be analyzed in sub-10nm SiGe layer (~7 nm) grown on [100] Si substrate by chemical vapor deposition at the nanoscale level. The measurement technique is based on transmission electron microscopy (TEM), in which high-resolution transmission electron microscopy (HRTEM) image is combined with the image processing of geometric phase analysis (GPA) software. In this case, GPA analyzes the HRTEM images formed at the [011] zone axis to obtain information about strain maps along the [100] growth direction of the nanoscale SiGe region. The strain analyzed in the SiGe layer is within 1.6-2.9% with high precision and high spatial resolution.","PeriodicalId":18861,"journal":{"name":"Nano Hybrids and Composites","volume":"32 1","pages":"41 - 47"},"PeriodicalIF":0.4000,"publicationDate":"2022-08-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"2D Strain Mapping in Sub-10nm SiGe Layer with High-Resolution Transmission Electron Microscopy and Geometric Phase Analysis\",\"authors\":\"Vandang Hoang, Van Trung Trinh\",\"doi\":\"10.4028/p-0xgppz\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this study, strain measurement can be analyzed in sub-10nm SiGe layer (~7 nm) grown on [100] Si substrate by chemical vapor deposition at the nanoscale level. The measurement technique is based on transmission electron microscopy (TEM), in which high-resolution transmission electron microscopy (HRTEM) image is combined with the image processing of geometric phase analysis (GPA) software. In this case, GPA analyzes the HRTEM images formed at the [011] zone axis to obtain information about strain maps along the [100] growth direction of the nanoscale SiGe region. The strain analyzed in the SiGe layer is within 1.6-2.9% with high precision and high spatial resolution.\",\"PeriodicalId\":18861,\"journal\":{\"name\":\"Nano Hybrids and Composites\",\"volume\":\"32 1\",\"pages\":\"41 - 47\"},\"PeriodicalIF\":0.4000,\"publicationDate\":\"2022-08-31\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Nano Hybrids and Composites\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.4028/p-0xgppz\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"NANOSCIENCE & NANOTECHNOLOGY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nano Hybrids and Composites","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.4028/p-0xgppz","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"NANOSCIENCE & NANOTECHNOLOGY","Score":null,"Total":0}
2D Strain Mapping in Sub-10nm SiGe Layer with High-Resolution Transmission Electron Microscopy and Geometric Phase Analysis
In this study, strain measurement can be analyzed in sub-10nm SiGe layer (~7 nm) grown on [100] Si substrate by chemical vapor deposition at the nanoscale level. The measurement technique is based on transmission electron microscopy (TEM), in which high-resolution transmission electron microscopy (HRTEM) image is combined with the image processing of geometric phase analysis (GPA) software. In this case, GPA analyzes the HRTEM images formed at the [011] zone axis to obtain information about strain maps along the [100] growth direction of the nanoscale SiGe region. The strain analyzed in the SiGe layer is within 1.6-2.9% with high precision and high spatial resolution.
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