NBTI、TDDS和RTN的随机空穴捕获-去捕获框架

2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2019-09-01 DOI:10.1109/SISPAD.2019.8870524

S. Bhagdikar, S. Mahapatra

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引用次数: 8

摘要

提出了一个随机框架来模拟p沟道MOS晶体管栅极介电介质中存在的单个缺陷的空穴捕获和脱陷。该模型使用Gillespie随机模拟算法(GSSA)计算了被能量势垒隔开的缺陷的带电和不带电状态之间的热离子反应。在负偏置温度不稳定性(NBTI)、随机电报噪声(RTN)和时间相关缺陷光谱(TDDS)研究下，利用小面积器件的实验数据对该模型进行了验证。

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A Stochastic Hole Trapping-Detrapping Framework for NBTI, TDDS and RTN

A stochastic framework is presented to model hole trapping and detrapping into and out of individual defects that are present in the gate dielectric of a p-channel MOS transistor. The model calculates thermionic reactions between uncharged and charged states of a defect that are separated by an energy barrier, by using the Gillespie Stochastic Simulation Algorithm (GSSA). The model is validated using experimental data from small area devices under Negative Bias Temperature Instability (NBTI), Random Telegraph Noise (RTN) and Time Dependent Defect Spectroscopy (TDDS) studies.

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2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

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