具有HfO2栅极介质的双金属栅极CMOS

Technical digest. International Electron Devices Meeting Pub Date : 2002-12-08 DOI:10.1109/IEDM.2002.1175871

S. Samavedam, L. La, J. Smith, S. Dakshina-Murthy, E. Luckowski, J. Schaeffer, M. Zavala, R. Martin, V. Dhandapani, D. Triyoso, H. Tseng, P. Tobin, D. Gilmer, C. Hobbs, W. Taylor, J. Grant, R. Hegde, J. Mogab, C. Thomas, P. Abramowitz, M. Moosa, J. Conner, J. Jiang, V. Arunachalarn, M. Sadd, B. Nguyen, B. White

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引用次数: 47

摘要

本文首次报道了采用TiN (PMOS)和TaSiN (NMOS)栅极在HfO/sub - 2/栅极介质上的新型双金属栅极CMOS集成。与单金属集成相比，双金属集成不会降低栅极泄漏、迁移率和电荷捕获行为。从双金属栅极mosfet获得了有希望的初步TDDB数据，同时仍然提供了大大改善的栅极泄漏(10/sup 4/ - 10/sup 5/ X比SiO/sub 2/好)。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Dual-metal gate CMOS with HfO2 gate dielectric

We report for the first time on a novel dual-metal gate CMOS integration on HfO/sub 2/ gate dielectric using TiN (PMOS) and TaSiN (NMOS) gate electrodes. Compared to a single metal integration, the dual-metal integration does not degrade gate leakage, mobility and charge trapping behavior. Promising preliminary TDDB data were obtained from dual-metal gate MOSFETs, while still delivering much improved gate leakage (10/sup 4/ - 10/sup 5/ X better than SiO/sub 2/).

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来源期刊

Technical digest. International Electron Devices Meeting

CiteScore

4.50

自引率

0.00%

发文量