Influence of temperature on the electrical properties of selenium thin films

In the present study, selenium thin films of thickness ∼2.1 µm were synthesized using thermal evaporation method. The presence of selenium in the sample was confirmed using energy dispersive spectrum. Vibration analysis of the structural groups in the samples, before and after annealing, was carried out using Raman spectroscopy. The crystallization of the sample due to annealing was studied using X-ray diffraction. The change in the energy band gap of the film due to annealing was estimated from the Urbach edge of the absorption spectrum. Electrical properties namely conductance and capacitance at different voltages were investigated. Changes in the conductance and capacitance when heating the sample from room temperature to 400 K were studied.In the present study, selenium thin films of thickness ∼2.1 µm were synthesized using thermal evaporation method. The presence of selenium in the sample was confirmed using energy dispersive spectrum. Vibration analysis of the structural groups in the samples, before and after annealing, was carried out using Raman spectroscopy. The crystallization of the sample due to annealing was studied using X-ray diffraction. The change in the energy band gap of the film due to annealing was estimated from the Urbach edge of the absorption spectrum. Electrical properties namely conductance and capacitance at different voltages were investigated. Changes in the conductance and capacitance when heating the sample from room temperature to 400 K were studied.