采用氮化硅或氮化铝涂层对模具背面应力进行改性

J. Liao, S. Liu, Y. T. Yu, Y. Lin, G. Jin, G. Huang, Z. Fu
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引用次数: 1

摘要

提高微电子封装的机械性能,包括降低热机械应力和提高模具断裂强度,是电气组装和封装技术长期追求的目标。由于翘曲或表面缺陷引起的与模具背面应力有关的失效模式可能在模具背面应力控制不好的情况下发生。在本研究中,研究了薄层AlN或Si3N4涂层对模具背面应力的影响。有限元模拟结果表明,涂层后的应力分布可以改变,且与涂层厚度密切相关,因为涂层后模具表面应力减小。采用三点弯曲试验法测定了模具的抗折强度,并对涂覆和未涂覆试样的测试结果进行了比较。结果表明,抗断模强度与氮化硅或氮化硅涂层的厚度和表面粗糙度有关。当厚度和表面粗糙度同时优化时,可实现模具断裂强度的提高。结果表明,在芯片背面进行附加涂层可能是改善电子封装力学性能的一种可行方法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Die backside stress modification by coating of Si3N4 or AlN layers
The ability to improve the mechanical properties of a microelectronic package, including reducing the thermal-mechanical stress and increasing the die breaking strength is a long-sought goal in electrical assembly and packaging technology. Failure modes related with die backside stress caused by warpage or cosmetic defects may occur without a well control of die-backside stress. In this study, the modifications of die backside stress by coating of a thin layer of AlN or Si3N4 have been investigated. The simulation through the Finite Element Method (FEM) indicated that the stress distribution can be modified after coating and it is strongly related to the thickness of the coated layer, as the stress of die backside surface reduces. Die breaking strength has been measured by 3 point bending test and the measurement results are compared between samples with and without coatings. It is demonstrated that the die breaking strength is related with the thickness and the surface roughness of the coating layer of AlN or Si3N4. Improvement in the die breaking strength can be realized when the thickness and surface roughness are both optimized. The results suggested the additional coating of the die backside may be a feasible way to improve the mechanical properties of the electronic packages.
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