具有优化击穿电压过程窗口的超结器件

2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT) Pub Date : 2020-11-03 DOI:10.1109/ICSICT49897.2020.9278209

M. Ren, Lv-Qiang Li, Yaoyao Lan, Rongyao Ma, Xin Zhang, Fang Zheng, Wei Gao, Ze-hong Li, Bo Zhang

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引用次数: 0

摘要

为了提高击穿电压(BV)的工艺窗口，提出了一种垂直可变掺杂(VVD)超结MOSFET (SJ-MOS)。利用电荷叠加原理分析了梯度掺杂引起的电场(e场)变化。与均匀掺杂的SJ-MOS相比，p柱的负掺杂梯度和n柱的正掺杂梯度使电子场分布更加均匀，有利于BV过程窗口的扩大。

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The Superjunction Device with Optimized Process Window of Breakdown Voltage

In order to improve the process window of breakdown voltage (BV), a vertical variable doping (VVD) superjunction MOSFET (SJ-MOS) is proposed. The charge superposition principle is used to analyze the change of electric field (e- field) caused by the gradient doping of pillars. Compared with the uniform doping SJ-MOS, it is shown that the negative doping gradient in P-pillar and the positive doping gradient in N-pillar can make the distribution of e- field more uniform, which is beneficial to the expansion of the BV process window.

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来源期刊

2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)

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