基于MRPIM的堆叠嵌入式DRAM混合键电磁与电热耦合特性研究

Jingrui Chai, Xiping Jiang, Xudong Gao, Bing Yu, Xiaofeng Zhou, Pengcheng Yin, Song Wang, J. Tan, Zhengwen Wang, Mei Li, Gang Dong, Qiwei Ren
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引用次数: 0

摘要

采用晶圆间混合键合技术,实现DRAM阵列晶圆与逻辑晶圆的面对面连接,具有高密度集成、高带宽和高能效的优点。采用本文提出的无网格径向点插值方法(M-RPIM),研究了堆叠嵌入式DRAM (SEDRAM)阵列的电磁串扰和杂化键合孔(HBV)的电热性能,以减少阵列的电磁串扰和热串扰。将信号hbv和地hbv按平行四边形排列,可使串扰噪声和最高温度分别降低10%和11%。此外,为了进一步提高SEDRAM的性能,还提出了一种先进的蜂窝状虚拟hbv阵列和交错堆叠的TSV-HBV结构。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
An Investigation for Electromagnetic and Electrothermal coupling Characteristics of Hybrid Bond in Stacked Embedded DRAM with MRPIM
Wafer-to-wafer hybrid bonding technology is used to realize a DRAM array wafer and a logic wafer face-to-face connected with the advantages of a high density integration for high bandwidth and energy efficiency. With the proposed stacked embedded DRAM (SEDRAM), the electromagnetic crosstalk and the electrothermal performance of hybrid bonding via (HBV) are studied using the proposed Meshless radial point interpolation method (M-RPIM) to reduce the electromagnetic crosstalk and the thermal crosstalk of the array. A parallelogram layout which arranges the signal HBVs and the ground HBVs in parallelogram shows the crosstalk noise and the maximum temperature is reduced by 10% and 11% respectively. In addition, an advanced honeycomb arrangement with dummy HBVs array and the interleaving stacking TSV-HBV structure are also proposed to further improve the performance of the SEDRAM.
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