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引用次数: 1
摘要
这项工作研究了由新材料组成的下一代计算金属化层的屏障系统。利用XPS深度谱分析了退火后钴在Ta/Ru层和TaN/Ru层中的扩散。将混合-粗糙度-信息深度(MRI)模型应用于钴的浓度分布估计了扩散系数，并计算了两种材料的扩散活化能。进一步分析了薄膜在退火过程中晶体结构的变化。估计了D(Co in Ta/Ru) ~ 6.162e-13 exp(−139.7/RT) m2/s和D(Co in TaN/Ru) ~ 2.9948e-16 exp(−87.63/RT) m2/s的扩散系数。
XPS Diffusion analysis of Ta(N)/Ru Diffusion Barriers for Cobalt Interconnects
This work examines barrier systems of metallization layers made up of novel materials for next generation computing. The diffusion of cobalt into a Ta/Ru as well as a TaN/Ru layer was analyzed by XPS depth profiles after annealing. The diffusion coefficients were estimated by applying the Mixing-Roughness-Information Depth (MRI) model to the concentration profile of cobalt and the activation energy for diffusion was calculated for both materials. Furthermore the thin films were analyzed regarding their crystal structure change upon annealing. Diffusion coefficients of D(Co in Ta/Ru) ~ 6.162e–13 exp(−139.7/RT) m2/s and D(Co in TaN/Ru) ~ 2.9948e–16 exp(−87.63/RT) m2/s were estimated.
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