{"title":"高温退火诱导非化学计量氧化硅膜相分离的热力学理论","authors":"A. Sarikov","doi":"10.3390/nanomanufacturing3030019","DOIUrl":null,"url":null,"abstract":"High-temperature anneals of nonstoichiometric Si oxide (SiOx, x < 2) films induce phase separation in them, with the formation of composite structures containing amorphous or crystalline Si nanoinclusions embedded in the Si oxide matrix. In this paper, a thermodynamic theory of the phase separation process in SiOx films is proposed. The theory is based on the thermodynamic models addressing various aspects of this process which we previously developed. A review of these models is provided, including: (i) the derivation of the expressions for the Gibbs free energy of Si oxides and Si/Si oxide systems, (ii) the identification of the phase separation driving forces and counteracting mechanisms, and (iii) the crystallization behavior of amorphous Si nanoinclusions in the Si oxide matrix. A general description of the phase separation process is presented. A number of characteristic features of the nano-Si/Si oxide composites formed by SiOx decomposition, such as the local separation of Si nanoinclusions surrounded by the Si oxide matrix; the dependence of the amount of separated Si and the equilibrium matrix composition on the initial Si oxide stoichiometry and annealing temperature; and the correlation of the presence of amorphous and crystalline Si nanoinclusions with the presence of SiOx (x < 2) and SiO2 phase, respectively, in the Si oxide matrix, are explained.","PeriodicalId":52345,"journal":{"name":"Nanomanufacturing and Metrology","volume":"32 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2023-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Thermodynamic Theory of Phase Separation in Nonstoichiometric Si Oxide Films Induced by High-Temperature Anneals\",\"authors\":\"A. Sarikov\",\"doi\":\"10.3390/nanomanufacturing3030019\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"High-temperature anneals of nonstoichiometric Si oxide (SiOx, x < 2) films induce phase separation in them, with the formation of composite structures containing amorphous or crystalline Si nanoinclusions embedded in the Si oxide matrix. In this paper, a thermodynamic theory of the phase separation process in SiOx films is proposed. The theory is based on the thermodynamic models addressing various aspects of this process which we previously developed. A review of these models is provided, including: (i) the derivation of the expressions for the Gibbs free energy of Si oxides and Si/Si oxide systems, (ii) the identification of the phase separation driving forces and counteracting mechanisms, and (iii) the crystallization behavior of amorphous Si nanoinclusions in the Si oxide matrix. A general description of the phase separation process is presented. A number of characteristic features of the nano-Si/Si oxide composites formed by SiOx decomposition, such as the local separation of Si nanoinclusions surrounded by the Si oxide matrix; the dependence of the amount of separated Si and the equilibrium matrix composition on the initial Si oxide stoichiometry and annealing temperature; and the correlation of the presence of amorphous and crystalline Si nanoinclusions with the presence of SiOx (x < 2) and SiO2 phase, respectively, in the Si oxide matrix, are explained.\",\"PeriodicalId\":52345,\"journal\":{\"name\":\"Nanomanufacturing and Metrology\",\"volume\":\"32 1\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-07-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Nanomanufacturing and Metrology\",\"FirstCategoryId\":\"1089\",\"ListUrlMain\":\"https://doi.org/10.3390/nanomanufacturing3030019\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"Engineering\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nanomanufacturing and Metrology","FirstCategoryId":"1089","ListUrlMain":"https://doi.org/10.3390/nanomanufacturing3030019","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"Engineering","Score":null,"Total":0}
引用次数: 1
摘要
对非化学计量氧化硅(SiOx, x < 2)薄膜进行高温退火,导致其相分离,在氧化硅基体中形成含有非晶或晶体硅纳米包裹体的复合结构。本文提出了SiOx薄膜中相分离过程的热力学理论。该理论是建立在热力学模型的基础上的,该模型解决了我们以前开发的这一过程的各个方面。对这些模型进行了回顾,包括:(i)推导了硅氧化物和硅/硅氧化物体系的吉布斯自由能表达式,(ii)确定了相分离驱动力和抵消机制,以及(iii)非晶硅纳米包裹体在硅氧化物基体中的结晶行为。给出了相分离过程的一般描述。SiOx分解形成的纳米硅/氧化硅复合材料具有许多特征,如被氧化硅基体包围的纳米硅包裹体的局部分离;分离Si的数量和平衡矩阵组成与初始Si氧化物化学计量和退火温度的关系;并解释了Si氧化物基体中SiOx (x < 2)相和SiO2相的存在与非晶态和晶态Si纳米包裹体存在的关系。
Thermodynamic Theory of Phase Separation in Nonstoichiometric Si Oxide Films Induced by High-Temperature Anneals
High-temperature anneals of nonstoichiometric Si oxide (SiOx, x < 2) films induce phase separation in them, with the formation of composite structures containing amorphous or crystalline Si nanoinclusions embedded in the Si oxide matrix. In this paper, a thermodynamic theory of the phase separation process in SiOx films is proposed. The theory is based on the thermodynamic models addressing various aspects of this process which we previously developed. A review of these models is provided, including: (i) the derivation of the expressions for the Gibbs free energy of Si oxides and Si/Si oxide systems, (ii) the identification of the phase separation driving forces and counteracting mechanisms, and (iii) the crystallization behavior of amorphous Si nanoinclusions in the Si oxide matrix. A general description of the phase separation process is presented. A number of characteristic features of the nano-Si/Si oxide composites formed by SiOx decomposition, such as the local separation of Si nanoinclusions surrounded by the Si oxide matrix; the dependence of the amount of separated Si and the equilibrium matrix composition on the initial Si oxide stoichiometry and annealing temperature; and the correlation of the presence of amorphous and crystalline Si nanoinclusions with the presence of SiOx (x < 2) and SiO2 phase, respectively, in the Si oxide matrix, are explained.
期刊介绍:
Nanomanufacturing and Metrology is a peer-reviewed, international and interdisciplinary research journal and is the first journal over the world that provides a principal forum for nano-manufacturing and nano-metrology.Nanomanufacturing and Metrology publishes in the forms including original articles, cutting-edge communications, timely review papers, technical reports, and case studies. Special issues devoted to developments in important topics in nano-manufacturing and metrology will be published periodically.Nanomanufacturing and Metrology publishes articles that focus on, but are not limited to, the following areas:• Nano-manufacturing and metrology• Atomic manufacturing and metrology• Micro-manufacturing and metrology• Physics, chemistry, and materials in micro-manufacturing, nano-manufacturing, and atomic manufacturing• Tools and processes for micro-manufacturing, nano-manufacturing and atomic manufacturing