线边缘粗糙度诱导无结边壁电荷等离子体结构晶体管的变化研究

2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT) Pub Date : 2020-11-03 DOI:10.1109/ICSICT49897.2020.9278349

Kai Liu, Hung-Chih Chin, H. Lou, Kuan‐Chang Chang, Xinnan Lin

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引用次数: 0

摘要

本文研究了双栅极电荷等离子体无结晶体管(CPJLT)和侧壁电荷等离子体无结晶体管(S-CPJLT)的线边缘粗糙度对导通电流、关断电流、亚阈值摆幅和阈值电压等电特性的影响。结果表明，S-CPJLT在保持其他电特性性能的同时，导通电流波动较小。S-CPJLT的on电流大，off电流小。这表明S-CPJLT在电子器件开发中具有更大的潜力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Variation Investigation of Junction-less Transistor with Side-wall Charge-plasma Structure Induced by Line Edge Roughness

In this work, the fluctuations of the electrical characteristics including ON -current, OFF -current, subthreshold swing and threshold voltage, due to line edge roughness (LER) for double-gate charge-plasma junctionless transistor (CPJLT) and side-wall charge-plasma junctionless transistor (S-CPJLT) are explored. Results shows that S-CPJLT has less fluctuations in ON -current while maintaining similar performance of other electrical characteristics. Besides, S-CPJLT has larger ON-current, smaller OFF-current on average. This work indicates that S-CPJLT has greater potential in electronic device development.

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来源期刊

2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)

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