J. C. Jackson, A. Morrison, D. Phelan, A. Mathewson
{"title":"一种新型硅盖革模式雪崩光电二极管","authors":"J. C. Jackson, A. Morrison, D. Phelan, A. Mathewson","doi":"10.1109/IEDM.2002.1175958","DOIUrl":null,"url":null,"abstract":"Dark count nonlinearity in CMOS compatible, single photon counting, Geiger-mode avalanche photodiodes (GM-APD) has been investigated. A novel structure was designed, fabricated, and characterized to allow dark count optimization. Dark count levels for the proposed structure are shown to scale linearly with area.","PeriodicalId":74909,"journal":{"name":"Technical digest. International Electron Devices Meeting","volume":"140 1","pages":"797-800"},"PeriodicalIF":0.0000,"publicationDate":"2002-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"35","resultStr":"{\"title\":\"A novel silicon Geiger-mode avalanche photodiode\",\"authors\":\"J. C. Jackson, A. Morrison, D. Phelan, A. Mathewson\",\"doi\":\"10.1109/IEDM.2002.1175958\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Dark count nonlinearity in CMOS compatible, single photon counting, Geiger-mode avalanche photodiodes (GM-APD) has been investigated. A novel structure was designed, fabricated, and characterized to allow dark count optimization. Dark count levels for the proposed structure are shown to scale linearly with area.\",\"PeriodicalId\":74909,\"journal\":{\"name\":\"Technical digest. International Electron Devices Meeting\",\"volume\":\"140 1\",\"pages\":\"797-800\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-12-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"35\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Technical digest. International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2002.1175958\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Technical digest. International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2002.1175958","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Dark count nonlinearity in CMOS compatible, single photon counting, Geiger-mode avalanche photodiodes (GM-APD) has been investigated. A novel structure was designed, fabricated, and characterized to allow dark count optimization. Dark count levels for the proposed structure are shown to scale linearly with area.
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