调q YAG:Nd/YAG:Cr微芯片激光器的产热过程及其对激光辐射参数的影响

2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE) Pub Date : 2012-09-01 DOI:10.1109/OMEE.2012.6464799

O. Buryy, S. Ubizskii

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引用次数: 0

摘要

研究了被动调q YAG:Nd/YAG:Cr微芯片激光器的产热过程。测定了激光晶体的温度、折射率和变形的分布。在给定有源元件折射率和变形的情况下，计算了光束半径和散度。

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The heat generation processes in Q-switched YAG:Nd/YAG:Cr microchip laser and their influence on the parameters of laser radiation

The heat generation processes are considered for passively Q-switched YAG:Nd/YAG:Cr microchip laser. The distributions of the temperature, the refractive index and the deformations of laser crystal are determined. At the given profile of refractive index and deformations of the active element, the laser beam radius and the divergence are calculated.

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2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE)

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