Very uniform epitaxy

A comprehensive evaluation of the T-shaped reactor, in view of its use as a production tool for 1300 nm optoelectronic devices, was carried out. The material obtained was of excellent quality and exhibited a very high degree of uniformity and good reproducibility, despite the difficulties associated with the control of two composition ratios, particularly with the As/P one. The extension to other compositions is obvious. Ternary and quasi-ternary materials ( InGaAs, InGaAlAs ) can be handled with even greater ease, not to speak about binaries and quasi-binaries ( GaAs, GaAlAs ). The system lends itself naturally to extension toward larger wafer sizes. A multi-wafer system based on the same principles can also be implemented ; very recently, such a system was proposed by Frijlink [16].