{"title":"基于硅纳米线结构的超高峰谷电流比负差分电阻器件","authors":"S. Shin, M. Ryu, K. Kim","doi":"10.1109/SNW.2012.6243340","DOIUrl":null,"url":null,"abstract":"Negative differential resistance (NDR) devices are proposed with ultra-high peak-to-valley current ratio (PVCR) over 104 based on silicon nanowire structure.","PeriodicalId":6402,"journal":{"name":"2012 IEEE Silicon Nanoelectronics Workshop (SNW)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2012-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Negative Differential resistance devices with ultra-high peak-to-valley current ratio based on silicon nanowire structure\",\"authors\":\"S. Shin, M. Ryu, K. Kim\",\"doi\":\"10.1109/SNW.2012.6243340\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Negative differential resistance (NDR) devices are proposed with ultra-high peak-to-valley current ratio (PVCR) over 104 based on silicon nanowire structure.\",\"PeriodicalId\":6402,\"journal\":{\"name\":\"2012 IEEE Silicon Nanoelectronics Workshop (SNW)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-06-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 IEEE Silicon Nanoelectronics Workshop (SNW)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SNW.2012.6243340\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE Silicon Nanoelectronics Workshop (SNW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SNW.2012.6243340","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Negative Differential resistance devices with ultra-high peak-to-valley current ratio based on silicon nanowire structure
Negative differential resistance (NDR) devices are proposed with ultra-high peak-to-valley current ratio (PVCR) over 104 based on silicon nanowire structure.
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