Gd掺杂碲化铅单晶的电学性质

CAS 2012 (International Semiconductor Conference) Pub Date : 2012-10-01 DOI:10.1109/SMICND.2012.6400788

A. Todosiciuc, A. Nicorici, E. Condrea, J. Warchulska

{"title":"Gd掺杂碲化铅单晶的电学性质","authors":"A. Todosiciuc, A. Nicorici, E. Condrea, J. Warchulska","doi":"10.1109/SMICND.2012.6400788","DOIUrl":null,"url":null,"abstract":"Temperature dependences of electric conductivity, free carrier concentration and mobility in single-crystalline PbTe: Gd samples with a varied impurity content are investigated. The features of electron transport in PbTe: Gd may be caused by a variable gadolinium valence. The striking result from the Seebeck coefficient measurements is that the thermoelectric power factor increases dramatically. Measurements of the magnetic susceptibility at low temperatures permit us to suggest that Gd ions exist in different charge states.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"1 1","pages":"269-272"},"PeriodicalIF":0.0000,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Electrical properties of lead telluride single crystals doped with Gd\",\"authors\":\"A. Todosiciuc, A. Nicorici, E. Condrea, J. Warchulska\",\"doi\":\"10.1109/SMICND.2012.6400788\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Temperature dependences of electric conductivity, free carrier concentration and mobility in single-crystalline PbTe: Gd samples with a varied impurity content are investigated. The features of electron transport in PbTe: Gd may be caused by a variable gadolinium valence. The striking result from the Seebeck coefficient measurements is that the thermoelectric power factor increases dramatically. Measurements of the magnetic susceptibility at low temperatures permit us to suggest that Gd ions exist in different charge states.\",\"PeriodicalId\":9628,\"journal\":{\"name\":\"CAS 2012 (International Semiconductor Conference)\",\"volume\":\"1 1\",\"pages\":\"269-272\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"CAS 2012 (International Semiconductor Conference)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMICND.2012.6400788\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"CAS 2012 (International Semiconductor Conference)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.2012.6400788","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 4

摘要

研究了不同杂质含量的PbTe: Gd单晶样品中电导率、自由载流子浓度和迁移率的温度依赖性。PbTe: Gd中电子传递的特征可能是由可变的钆价引起的。塞贝克系数测量的惊人结果是热电功率因数急剧增加。在低温下磁化率的测量使我们认为Gd离子存在于不同的电荷状态。

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Electrical properties of lead telluride single crystals doped with Gd

Temperature dependences of electric conductivity, free carrier concentration and mobility in single-crystalline PbTe: Gd samples with a varied impurity content are investigated. The features of electron transport in PbTe: Gd may be caused by a variable gadolinium valence. The striking result from the Seebeck coefficient measurements is that the thermoelectric power factor increases dramatically. Measurements of the magnetic susceptibility at low temperatures permit us to suggest that Gd ions exist in different charge states.

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CAS 2012 (International Semiconductor Conference)

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