130 nm CMOS双平衡Gilbert Cell混频器的设计与优化

Dr. Satyanarayana R․V․S․, Subramanyam Avvaru
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引用次数: 3

摘要

针对印度各种无线设备在各种许可豁免频率范围内的特定增益和功率要求,提出了一种改进的双平衡吉尔伯特小区混频器设计程序。下变频混频器设计的目标是在130纳米CMOS工艺下实现。在2.5 mW直流功率下,在混频器的跨导和开关级的最小超速驱动下,转换增益超过10 dB,噪声系数低于10 dB。提出了几种优化技术,以提高所设计混频器的增益、线性度和噪声性能。针对1 db增益压缩和三阶截距点,将线性度提高约10 dBm,引入一个独特的标准,在保留混频器增益和噪声性能的同时,整合并详尽地探索增强技术。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Design and Optimization of Double Balanced Gilbert Cell Mixer in 130 nm CMOS Process

An improved design procedure for double balanced Gilbert cell mixer is proposed for specific gain and power requirements at various license exempted frequency ranges for a variety of wireless equipment in India. The down conversion mixer design is aimed to carry out in 130 nm CMOS process. At 2.5 mW d.c power, a conversion gain of over 10 dB and a noise figure under 10 dB is intended at minimum overdrives for transconductance and switching stages of the mixer. Several optimization techniques for enhancement of gain, linearity and noise performances of the designed mixer are presented. An improvement in linearity about 10 dBm is targeted for 1-dB gain compression as well as third order intercept points introducing a unique criterion to integrate and exhaustively explore the enhancement techniques while preserving the gain as well as noise performance of the mixer.

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