横杆读取操作的解析模型

2016 IEEE 22nd International Symposium on On-Line Testing and Robust System Design (IOLTS) Pub Date : 2016-07-04 DOI:10.1109/IOLTS.2016.7604657

Adedotun Adeyemo, Xiaohan Yang, Anu Bala, J. Mathew, A. Jabir

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引用次数: 0

摘要

电阻式存储器具有更简单的结构，并且能够在不使用存取器件的情况下通过横条结构产生高密度存储器。然而，电阻式存储器的可靠性仍然是一个问题，特别是在其基本读取操作方面。本文给出了一种综合的交叉棒阵列电阻器件模型，以及四种交叉棒读取方案的模型。这些模型不受约束，适用于交叉棒阵列的精确分析和读操作时的性能评估。

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Analytic models for crossbar read operation

Resistive memories have simpler structures and are capable of producing highly dense memory through crossbar architecture without the use of access devices. Reliability however remains a problem of resistive memories especially in its basic read operation. This paper presents a comprehensive model for resistive devices in crossbar array as well as models for four crossbar read schemes. These models are non-restrictive and are suitable for accurate analytical analysis of crossbar arrays and the evaluation of their performance during read operation.

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来源期刊

2016 IEEE 22nd International Symposium on On-Line Testing and Robust System Design (IOLTS)

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