{"title":"全量子模拟,设计和分析硅隧道二极管,MOS泄漏和电容,hemt,和rtd","authors":"R. Lake","doi":"10.1109/IEDM.2001.979439","DOIUrl":null,"url":null,"abstract":"The Nanoelectronic Engineering Modeling software (NEMO) has been used to model the quantum electron and hole transport and charge in a wide variety of material systems and semiconductor devices. This paper provides an overview of NEMO's current status, its applications, and its theoretical extensions.","PeriodicalId":13825,"journal":{"name":"International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)","volume":"33 1","pages":"5.5.1-5.5.4"},"PeriodicalIF":0.0000,"publicationDate":"2001-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Full quantum simulation, design, and analysis of Si tunnel diodes, MOS leakage and capacitance, HEMTs, and RTDs\",\"authors\":\"R. Lake\",\"doi\":\"10.1109/IEDM.2001.979439\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The Nanoelectronic Engineering Modeling software (NEMO) has been used to model the quantum electron and hole transport and charge in a wide variety of material systems and semiconductor devices. This paper provides an overview of NEMO's current status, its applications, and its theoretical extensions.\",\"PeriodicalId\":13825,\"journal\":{\"name\":\"International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)\",\"volume\":\"33 1\",\"pages\":\"5.5.1-5.5.4\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-12-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2001.979439\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2001.979439","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Full quantum simulation, design, and analysis of Si tunnel diodes, MOS leakage and capacitance, HEMTs, and RTDs
The Nanoelectronic Engineering Modeling software (NEMO) has been used to model the quantum electron and hole transport and charge in a wide variety of material systems and semiconductor devices. This paper provides an overview of NEMO's current status, its applications, and its theoretical extensions.