高度可靠的MONOS器件与优化的氮化硅薄膜具有氘终止电荷阱

Technical digest. International Electron Devices Meeting Pub Date : 2002-12-08 DOI:10.1109/IEDM.2002.1175821

M. Tanaka, S. Saida, Y. Mitani, I. Mizushima, Y. Tsunashima

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引用次数: 12

摘要

对于高可靠性的MONOS器件，通过详细研究电宽范围薄膜与器件性能之间的关系，设计了优化的氮化硅薄膜，并通过强大的氘退火技术实现了很大的改进，产生了高耐用性的器件，可以抵抗写/擦除操作的持久应力。

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Highly reliable MONOS devices with optimized silicon nitride film having deuterium terminated charge traps

For highly reliable MONOS devices, an optimized silicon nitride film has been designed from a detailed investigation of relationships between electrically wide ranging films and device performance, and a large improvement has been realized by the powerful technique of deuterium annealing, yielding highly durable devices against endurance stress of write/erase operations.

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来源期刊

Technical digest. International Electron Devices Meeting

CiteScore

4.50

自引率

0.00%

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