铁电/介电界面的C-V、P-V和电导多探针表征

Junkang Li, Y. Qu, M. Si, X. Lyu, P. Ye
{"title":"铁电/介电界面的C-V、P-V和电导多探针表征","authors":"Junkang Li, Y. Qu, M. Si, X. Lyu, P. Ye","doi":"10.1109/VLSITechnology18217.2020.9265069","DOIUrl":null,"url":null,"abstract":"In this work, we report on the multi-probe characterization of interfacial charges at the ferroelectric/dielectric (FE/DE) interface in response to both large-signal measurement associated with polarization switching and small-signal measurement without polarization switching. Charge densities at the FE/DE interface are extracted from temperature dependent C-V, P-V, conductance methods. It is found that the charge injection and accumulation at the FE/DE interface play a key role in the operation of FE/DE stack. These enormous trapped charges of 1013-1014 cm-2 at the FE/DE interface are supplied from the leakage current through the ultrathin DE layer. The proposed multi-probe measurement techniques provide a comprehensive understanding of FE/DE stack. The demonstrated leakage-assist polarization switching provides the new insights on the understanding of negative-capacitance (NC) effect and ferroelectric device performance.","PeriodicalId":6850,"journal":{"name":"2020 IEEE Symposium on VLSI Technology","volume":"40 1","pages":"1-2"},"PeriodicalIF":0.0000,"publicationDate":"2020-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":"{\"title\":\"Multi-Probe Characterization of Ferroelectric/Dielectric Interface by C-V, P-V and Conductance Methods\",\"authors\":\"Junkang Li, Y. Qu, M. Si, X. Lyu, P. Ye\",\"doi\":\"10.1109/VLSITechnology18217.2020.9265069\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, we report on the multi-probe characterization of interfacial charges at the ferroelectric/dielectric (FE/DE) interface in response to both large-signal measurement associated with polarization switching and small-signal measurement without polarization switching. Charge densities at the FE/DE interface are extracted from temperature dependent C-V, P-V, conductance methods. It is found that the charge injection and accumulation at the FE/DE interface play a key role in the operation of FE/DE stack. These enormous trapped charges of 1013-1014 cm-2 at the FE/DE interface are supplied from the leakage current through the ultrathin DE layer. The proposed multi-probe measurement techniques provide a comprehensive understanding of FE/DE stack. The demonstrated leakage-assist polarization switching provides the new insights on the understanding of negative-capacitance (NC) effect and ferroelectric device performance.\",\"PeriodicalId\":6850,\"journal\":{\"name\":\"2020 IEEE Symposium on VLSI Technology\",\"volume\":\"40 1\",\"pages\":\"1-2\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"12\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 IEEE Symposium on VLSI Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSITechnology18217.2020.9265069\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE Symposium on VLSI Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSITechnology18217.2020.9265069","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 12

摘要

在这项工作中,我们报告了铁电/介电(FE/DE)界面电荷的多探针表征,以响应与极化开关相关的大信号测量和无极化开关的小信号测量。FE/DE界面的电荷密度由温度相关的C-V, P-V,电导方法提取。研究发现,FE/DE界面处的电荷注入和电荷积累对FE/DE堆的运行起着关键作用。这些在FE/DE界面处的1013-1014 cm-2的巨大捕获电荷是由通过超薄DE层的泄漏电流提供的。提出的多探针测量技术提供了对FE/DE堆栈的全面理解。所演示的漏辅助极化开关为理解负电容效应和铁电器件性能提供了新的见解。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Multi-Probe Characterization of Ferroelectric/Dielectric Interface by C-V, P-V and Conductance Methods
In this work, we report on the multi-probe characterization of interfacial charges at the ferroelectric/dielectric (FE/DE) interface in response to both large-signal measurement associated with polarization switching and small-signal measurement without polarization switching. Charge densities at the FE/DE interface are extracted from temperature dependent C-V, P-V, conductance methods. It is found that the charge injection and accumulation at the FE/DE interface play a key role in the operation of FE/DE stack. These enormous trapped charges of 1013-1014 cm-2 at the FE/DE interface are supplied from the leakage current through the ultrathin DE layer. The proposed multi-probe measurement techniques provide a comprehensive understanding of FE/DE stack. The demonstrated leakage-assist polarization switching provides the new insights on the understanding of negative-capacitance (NC) effect and ferroelectric device performance.
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