基于功率MOSFET的堆叠多相桥式变换器的功率损耗分析

2016 IEEE 8th International Power Electronics and Motion Control Conference (IPEMC-ECCE Asia) Pub Date : 2016-07-14 DOI:10.1109/IPEMC.2016.7512782

Lebing Jin, S. Norrga, O. Wallmark

{"title":"基于功率MOSFET的堆叠多相桥式变换器的功率损耗分析","authors":"Lebing Jin, S. Norrga, O. Wallmark","doi":"10.1109/IPEMC.2016.7512782","DOIUrl":null,"url":null,"abstract":"The ability to accurately predict power semiconductor losses is essential for converter design and can provide a reference for thermal management. Based on a stacked polyphase bridges converter, a simplified but accurate loss model is used in this paper to calculate the power losses of power MOSFETs and experimentally verified. A special focus of the analysis is the ringing loss calculation since it is inevitable in the switching process of power MOSFETs. In addition, this paper presents a comparison of power losses between Si MOSFET and GaN FET based converters by using the analytical model.","PeriodicalId":6857,"journal":{"name":"2016 IEEE 8th International Power Electronics and Motion Control Conference (IPEMC-ECCE Asia)","volume":"13 1","pages":"3050-3055"},"PeriodicalIF":0.0000,"publicationDate":"2016-07-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Analysis of power losses in power MOSFET based stacked polyphase bridges converters\",\"authors\":\"Lebing Jin, S. Norrga, O. Wallmark\",\"doi\":\"10.1109/IPEMC.2016.7512782\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The ability to accurately predict power semiconductor losses is essential for converter design and can provide a reference for thermal management. Based on a stacked polyphase bridges converter, a simplified but accurate loss model is used in this paper to calculate the power losses of power MOSFETs and experimentally verified. A special focus of the analysis is the ringing loss calculation since it is inevitable in the switching process of power MOSFETs. In addition, this paper presents a comparison of power losses between Si MOSFET and GaN FET based converters by using the analytical model.\",\"PeriodicalId\":6857,\"journal\":{\"name\":\"2016 IEEE 8th International Power Electronics and Motion Control Conference (IPEMC-ECCE Asia)\",\"volume\":\"13 1\",\"pages\":\"3050-3055\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-07-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE 8th International Power Electronics and Motion Control Conference (IPEMC-ECCE Asia)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IPEMC.2016.7512782\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE 8th International Power Electronics and Motion Control Conference (IPEMC-ECCE Asia)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPEMC.2016.7512782","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

准确预测功率半导体损耗的能力对于转换器的设计至关重要，并且可以为热管理提供参考。本文基于堆叠式多相桥式变换器，采用简化而精确的损耗模型计算功率mosfet的功率损耗，并进行了实验验证。由于振铃损耗在功率mosfet的开关过程中是不可避免的，因此分析的重点是振铃损耗的计算。此外，本文还利用分析模型比较了硅MOSFET和氮化镓FET变换器的功率损耗。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Analysis of power losses in power MOSFET based stacked polyphase bridges converters

The ability to accurately predict power semiconductor losses is essential for converter design and can provide a reference for thermal management. Based on a stacked polyphase bridges converter, a simplified but accurate loss model is used in this paper to calculate the power losses of power MOSFETs and experimentally verified. A special focus of the analysis is the ringing loss calculation since it is inevitable in the switching process of power MOSFETs. In addition, this paper presents a comparison of power losses between Si MOSFET and GaN FET based converters by using the analytical model.

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来源期刊

2016 IEEE 8th International Power Electronics and Motion Control Conference (IPEMC-ECCE Asia)

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