非对称准弹道DG-MOSFET中散射特性的评价

2012 IEEE Silicon Nanoelectronics Workshop (SNW) Pub Date : 2012-06-10 DOI:10.1109/SNW.2012.6243301

Gai Liu, G. Du, Tiao Lu, Xiaoyan Liu, Pingwen Zhang, Xing Zhang

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引用次数: 0

摘要

利用多子带玻尔兹曼输运方程求解器对准弹道非对称DG-MOSFET进行了模拟，并对势垒顶部背散射的重要参数进行了详细的研究。结果表明，模拟结果与已有理论基本一致，声子散射在栅极长度减小到10nm以下时仍然是限制MOSFET性能的重要因素。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Evaluation of scattering in asymmetric quasi-ballistic DG-MOSFET

Quasi-ballistic asymmetric DG-MOSFET has been simulated using a multi-subband Boltzmann transport equation solver and important parameters regarding to back-scattering at the top of barrier are carefully studied in this work. It is observed that the simulated results are in good agreement with established theory and phonon scattering still plays an important role in limiting the performance of MOSFET even when gate length is scaled down to sub-10nm.

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2012 IEEE Silicon Nanoelectronics Workshop (SNW)

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