具有离子植入发射极的商业尺寸多晶硅太阳能电池

A. Ebong, Yizhe Wang, Guangyao Jin, T. Zhou
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引用次数: 0

摘要

本文报道了第一个可制造的离子注入多晶硅太阳能电池的初步结果,其平均效率为16.60%。结果表明,离子注入243.4 cm2铝背表面场的多晶硅太阳电池效率最高,达到16.83%。2.8E15原子的剂量。在15 kev下使用cm2,并在类似单晶太阳能电池的植入退火下进行退火。开路电压为~621 mV,测得的内部量子效率(IQE)与使用POCl3发射极的多晶硅电池相似。这一结果是非常有希望的,并证实了种植体在退火过程中不会降低整体寿命。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Commercial size multicrytalline silicon solar cell with ion implant emitter
This paper reports on the preliminary results of the first manufacturable ion implanted multicrystalline silicon solar cells with mean efficiency of 16.60%. The best efficiency of 16.83% is demonstrated, which is the highest reported ion implanted 243.4 cm2 multicrystalline silicon solar cell with Al back surface field. A dose of 2.8E15 atom.cm2 at 15-keV was used and annealed at implant anneal similar to the mono crystalline solar cell counterparts. The open circuit voltage of ~621 mV and the measured internal quantum efficiency (IQE) were similar to multicrystalline cells using POCl3 emitter. This results is very promising and confirms that the bulk lifetime does not degrade during the implant anneal.
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