{"title":"具有新型CrTiN/TiN双势垒层的高密度铁电存储器的高热稳定性多晶硅节点","authors":"J. Koo, S. Hong, S. Yeom, J. Roh, Jiyoung Kim","doi":"10.1109/IEDM.2001.979484","DOIUrl":null,"url":null,"abstract":"We propose a novel CrTiN/TiN double barrier layer technology for high-density COB structure applications. After furnace annealing at 800/spl deg/C for 30min, a 0.35/spl mu/m poly-Si contact test structure with the Pt/CrTiN/TiN layer was found to maintain ohmic behaviors and provide a resistance of about 1k/spl Omega/. In addition, these contact structures successfully exhibited long time thermal stability at 750/spl deg/C. The findings of this study suggest that the CrTiN/TiN double barrier layer method is suitable for the COB structure in order to realize high-density ferroelectric memory applications.","PeriodicalId":13825,"journal":{"name":"International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)","volume":"10 3 1","pages":"12.5.1-12.5.4"},"PeriodicalIF":0.0000,"publicationDate":"2001-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"High thermal stability of poly-Si nodes with novel CrTiN/TiN double barrier layers for high-density ferroelectric memory applications\",\"authors\":\"J. Koo, S. Hong, S. Yeom, J. Roh, Jiyoung Kim\",\"doi\":\"10.1109/IEDM.2001.979484\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We propose a novel CrTiN/TiN double barrier layer technology for high-density COB structure applications. After furnace annealing at 800/spl deg/C for 30min, a 0.35/spl mu/m poly-Si contact test structure with the Pt/CrTiN/TiN layer was found to maintain ohmic behaviors and provide a resistance of about 1k/spl Omega/. In addition, these contact structures successfully exhibited long time thermal stability at 750/spl deg/C. The findings of this study suggest that the CrTiN/TiN double barrier layer method is suitable for the COB structure in order to realize high-density ferroelectric memory applications.\",\"PeriodicalId\":13825,\"journal\":{\"name\":\"International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)\",\"volume\":\"10 3 1\",\"pages\":\"12.5.1-12.5.4\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-12-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2001.979484\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2001.979484","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High thermal stability of poly-Si nodes with novel CrTiN/TiN double barrier layers for high-density ferroelectric memory applications
We propose a novel CrTiN/TiN double barrier layer technology for high-density COB structure applications. After furnace annealing at 800/spl deg/C for 30min, a 0.35/spl mu/m poly-Si contact test structure with the Pt/CrTiN/TiN layer was found to maintain ohmic behaviors and provide a resistance of about 1k/spl Omega/. In addition, these contact structures successfully exhibited long time thermal stability at 750/spl deg/C. The findings of this study suggest that the CrTiN/TiN double barrier layer method is suitable for the COB structure in order to realize high-density ferroelectric memory applications.
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