H. Shang, H. Okorn-Schmidt, K. Chan, M. Copel, J. Ott, P. Kozłowski, S. Steen, S. Cordes, H.-S.P. Wong, E. Jones, W. Haensch
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High mobility p-channel germanium MOSFETs with a thin Ge oxynitride gate dielectric
We report Ge p-channel MOSFETs with a thin gate stack of Ge oxynitride and LTO on bulk Ge substrate without a Si cap layer. Excellent device characteristics (IV and CV) are achieved with subthreshold slope 82mV/dec. /spl sim/40% hole mobility enhancement is obtained over the Si control with a thermal SiO/sub 2/ gate dielectric. To our knowledge, this is the first demonstration of Ge MOSFETs with less than 10nm thick gate dielectric and less than 100mV/dec subthreshold slope.
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