溶胶-凝胶法制备ß-GaiO3/Si日盲紫外光电二极管

2019 11th International Conference on Electrical and Electronics Engineering (ELECO) Pub Date : 2019-11-01 DOI:10.23919/ELECO47770.2019.8990517

Nur Efşan Köksal, A. Atilgan, Ugur Harmanci, A. Yildiz

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引用次数: 0

摘要

本文采用溶胶-凝胶自旋镀膜的方法设计并制备了一种新的SnO2/Ga2O3/Si异质结构。采用电流-电压(I-V)测量方法，研究了SnO2/Ga2O3/Si异质结构在黑暗和254 nm紫外照射下的电学性能。这是清楚地看到，光电二极管是敏感的紫外光，它也必须纠正行为。所制备的太阳盲紫外光电二极管是一种很有前途的紫外检测材料。对紫外光的时间响应明显表明该光电二极管具有良好的再现性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Fabrication of ß-GaiO3/Si Solar-Blind UV Photodiode via Sol-Gel Method

In this paper, a new SnO2/Ga2O3/Si heterostructure has been designed and fabricated via sol-gel spin coating method. The electrical property of SnO2/Ga2O3/Si heterostructure is investigated in the dark and under UV illumination with a wavelength of 254 nm by means of the current-voltage (I-V) measurements. It is clearly seen that the photodiode is sensitive to UV light and it also has to rectify behavior. The fabricated solar-blind UV photodiode is a promising candidate to detect UV light. The temporal response to UV light obviously shows that the good reproducibility of the photodiode.

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2019 11th International Conference on Electrical and Electronics Engineering (ELECO)

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