新颖的硅通孔3D系统集成技术

2013 IEEE International Interconnect Technology Conference - IITC Pub Date : 2013-06-13 DOI:10.1109/IITC.2013.6615595

Paragkumar Thadesar, A. Dembla, Devin K. Brown, M. Bakir

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引用次数: 4

摘要

为了规避互连带来的性能和能量瓶颈，在封装和芯片层面都需要新颖的互连解决方案。本文报道了(1)新型的光定义聚合物嵌入硅中间体中的过孔，以改善通过硅的插入损耗;(2)直径为100 nm，宽高比为20:1的超高密度低电容纳米tsv，用于细晶粒3D集成电路的实现。

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Novel through-silicon via technologies for 3D system integration

To circumvent the performance and energy bottlenecks due to interconnects, novel interconnect solutions are needed both at the package and die levels. This paper reports (1) novel photodefined polymer-embedded vias within silicon interposers for improved through-silicon via insertion loss, and (2) ultrahigh density low-capacitance nanoscale TSVs with 100 nm diameter and 20:1 aspect ratio for fine-grain 3D IC implementation.

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2013 IEEE International Interconnect Technology Conference - IITC

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