A. Kara-Omar, C. Vialon, D. Dragomirescu, A. Coustou, R. Plana
{"title":"130纳米技术下的3 GHz宽带透阻放大器","authors":"A. Kara-Omar, C. Vialon, D. Dragomirescu, A. Coustou, R. Plana","doi":"10.1109/SMICND.2008.4703440","DOIUrl":null,"url":null,"abstract":"This paper presents a transimpedance amplifier designed in ST Microelectronics BiCMOS9MW 130 nm technology. This circuit works as IF (intermediate frequency) buffer for mixer circuits. It presents a 37 dBOmega transimpedance gain, low input impedance, and 100Omega differential output impedance.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":"1 1","pages":"407-410"},"PeriodicalIF":0.0000,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Wide band transimpedance amplifier at 3 GHz IN 130 nm technology\",\"authors\":\"A. Kara-Omar, C. Vialon, D. Dragomirescu, A. Coustou, R. Plana\",\"doi\":\"10.1109/SMICND.2008.4703440\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a transimpedance amplifier designed in ST Microelectronics BiCMOS9MW 130 nm technology. This circuit works as IF (intermediate frequency) buffer for mixer circuits. It presents a 37 dBOmega transimpedance gain, low input impedance, and 100Omega differential output impedance.\",\"PeriodicalId\":6406,\"journal\":{\"name\":\"2008 IEEE International Conference on Semiconductor Electronics\",\"volume\":\"1 1\",\"pages\":\"407-410\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-12-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 IEEE International Conference on Semiconductor Electronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMICND.2008.4703440\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 IEEE International Conference on Semiconductor Electronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.2008.4703440","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Wide band transimpedance amplifier at 3 GHz IN 130 nm technology
This paper presents a transimpedance amplifier designed in ST Microelectronics BiCMOS9MW 130 nm technology. This circuit works as IF (intermediate frequency) buffer for mixer circuits. It presents a 37 dBOmega transimpedance gain, low input impedance, and 100Omega differential output impedance.
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