具有不同陷阱密度的缩放MONOS存储器的编程特性分析模型和陷阱密度调制MONOS存储器的方案

International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224) Pub Date : 2001-12-02 DOI:10.1109/IEDM.2001.979489

K. Nomoto, U. Fujiwara, H. Aozasa, T. Terano, T. Kobayashi

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引用次数: 3

摘要

研究了Si-H/N-H键密度与有刻度金属-氧化物-氮化物-氧化物半导体(MONOS)存储器件编程特性的关系，建立了具有不同陷阱密度的MONOS器件编程特性的分析模型。实验验证了模型的正确性。我们将该模型应用于在氮化层中具有陷阱密度调制的金属氧化物氮化半导体(MONS)存储器件。结果表明，与传统的MONOS存储器相比，MONOS存储器的编程速度更快，电压更低。

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Analytical model of the programming characteristics of scaled MONOS memories with a variety of trap densities and a proposal of a trap-density-modulated MONS memory

Investigated the relation between the density of Si-H/N-H bonds and the programming characteristics of scaled metal-oxide-nitride-oxide-semiconductor (MONOS) memory devices and developed an analytical model for programming characteristics of the MONOS devices having a variety of trap densities. The model was validated experimentally. We apply the model to a metal-oxide-nitride-semiconductor (MONS) memory device with trap-density modulation in the nitride layer. The result shows the MONS memory is programmed faster and at lower-voltage than the conventional MONOS memory device.

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International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)

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