HPX6 (X = C, Si, Ge, Sn)单分子膜的电场诱导相变

Krishnanshu Basak, S. Nath, Rajkumar Mondal, D. Jana
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引用次数: 0

摘要

本文在密度泛函理论的框架下,系统地研究了外电场作用下半金属HPX6 (X = C, Si, Ge, Sn)单层的电子、热电和光学性质。通过施加适当强度的外电场,在这些结构中实现了带调谐。预测了狄拉克锥分裂与外加电场强度成正比关系。外场诱导的电性能调制可以改变化学势在能带图中的位置,显著改善热电响应。外加电场的作用显著地调节了光学性质。电场感应HPX6系统为纳米器件应用提供了更好的热电和光学响应。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Electric Field‐Induced Phase Transition on HPX6 (X = C, Si, Ge, Sn) Monolayers
Herein, the electronic, thermoelectric, and optical properties of semimetallic HPX6 (X = C, Si, Ge, Sn) monolayers are systematically studied under the influence of external electric field in the framework of density functional theory. A band tuning has been achieved in these structures by the application of an external electric field of appropriate strength. It is predicted that Dirac cone splitting is nearly proportional to the external electric field strength. The modulation of electric properties induced by external field can alter the position of chemical potential in the band diagram and brings significant improvement in thermoelectric responses. The application of an external electric field significantly modulates the optical properties. The electric field‐induced HPX6 system provides better thermoelectric and optical response for nanodevice applications.
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