硅纳米晶掺入对多晶硅纳米线SONOS器件传输特性的影响

2012 IEEE Silicon Nanoelectronics Workshop (SNW) Pub Date : 2012-06-10 DOI:10.1109/SNW.2012.6243353

Ko-Hui Lee, Horng-Chih Lin, Tiao-Yuan Huang

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引用次数: 0

摘要

制备了嵌入硅纳米晶体(Si-NCs)的栅极全能多晶硅纳米线(GAA poly-Si NW) SONOS器件并对其进行了表征。当Si-NCs掺入后，传输特性表现出较大的顺时针Id-Vg迟滞和反向扫描时较小的扭结。位于SiNC/氮化物界面的Si悬空键被怀疑是观测结果的原因。

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Impacts of silicon nanocrystal incorporation on the transfer characteristics of poly-silicon nanowire SONOS devices

Gate-all-around poly-silicon nanowire (GAA poly-Si NW) SONOS devices embedded with silicon nanocrystals (Si-NCs) were fabricated and characterized. As Si-NCs are incorporated, the transfer characteristics show a large clockwise Id-Vg hysteresis and a small kink under reverse sweep. Si dangling bonds located at SiNC/nitride interfaces are suspected to be responsible for the observations.

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2012 IEEE Silicon Nanoelectronics Workshop (SNW)

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